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1. product profile 1.1 general description high-voltage, high-speed planar-passivated npn power switching tr ansistor in a sot78 (to-220ab) plastic package. 1.2 features and benefits 1.3 applications 1.4 quick reference data 2. pinning information buj103a silicon diffused power transistor rev. 4 ? 8 november 2011 product data sheet to-220ab ? low thermal resistance ? fast switching ? electronic lighting ballasts ? dc-to-dc converters ? inverters ? motor control systems ? v cesm ? 700 v ? i c ? 4 a ? p tot ? 80 w ? h fesat = 12.5 (typ) table 1. pinning pin description simplified outline symbol 1 base sot78 (to-220ab) 2 collector 3emitter mb mounting base; connected to collector 12 mb 3 sym056 2 3 1
buj103a all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 8 november 2011 2 of 13 nxp semiconductors buj103a silicon diffused power transistor 3. ordering information 4. limiting values table 2. ordering information type number package name description version buj103a to-220ab plastic single-ended package; hea tsink mounted; 1 mounting hole; 3-leads sot78 table 3. limiting values in accordance with the absolute ma ximum rating system (iec 60134). symbol parameter conditions min max unit v cesm peak collector-emitter voltage v be = 0 v - 700 v v cbo collector-base voltage open emitter - 700 v v ceo collector-emitter voltage open base - 400 v i c collector current (dc) - 4 a i cm peak collector current - 8 a i b base current (dc) - 2 a i bm peak base current - 4 a p tot total power dissipation t mb ? 25 ? c; see figure 1 -80w t stg storage temperature ? 65 +150 ?c t j junction temperature - 150 ?c fig 1. normalized total power dissipation as a function of mounting base temperature t mb (c) 0 160 120 40 80 001aab993 40 80 120 p der (%) 0 p der % ?? p tot p tot 25 ? c ?? ------------------------ - 100 % ? =
buj103a all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 8 november 2011 3 of 13 nxp semiconductors buj103a silicon diffused power transistor 5. thermal characteristics table 4. thermal characteristics symbol parameter conditions min typ max unit r th(j-mb) thermal resistance from junction to mounting base see figure 2 - - 1.56 k/w r th(j-a) thermal resistance from junction to ambient in free air - 60 - k/w fig 2. transient thermal impedance from junction to mounting base as a function of pulse duration 001aab998 t p (s) 10 ?5 11 0 10 ?1 10 ?2 10 ?4 10 ?3 1 10 ?1 10 z th(j-mb) (k/w) 10 ?2 = 0.5 0.2 0.1 t p t p t p tot t t = 0.01 0.05 0.02
buj103a all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 8 november 2011 4 of 13 nxp semiconductors buj103a silicon diffused power transistor 6. characteristics [1] measured with half sine-wave voltage (curve tracer). table 5. characteristics t mb = 25 ? c; unless otherwise specified. symbol parameter conditions min typ max unit static characteristics i ces collector-emitter cut-off current v be = 0 v; v ce = v cesmmax [1] --1ma v be = 0 v; v ce = v cesmmax ; t j =125 ?c [1] --2ma i cbo collector-base cut-off current v be = 0 v; v ce = v cesmmax [1] --1ma i ceo collector-emitter cut-off current v ceo = v ceommax = 400 v [1] --0.1ma i ebo emitter-base cut-off current v eb = 7 v; i c = 0 a --0.1ma v ceosus collector-emitter sustaining voltage i b = 0 a; i c = 10 ma; l = 25 mh; see figure 3 and 4 400--v v cesat collector-emitter saturation voltage i c = 3.0 a; i b = 0.6 a; see figure 10 -0.251v v besat base-emitter saturation voltage i c = 3.0 a; i b = 0.6 a; see figure 11 - 0.97 1.5 v h fe dc current gain i c = 1 ma; v ce = 5 v; see figure 9 10 17 32 i c = 500 ma; v ce = 5 v 132232 h fesat dc saturation current gain i c = 2.0 a; v ce = 5 v 11 16 22 i c = 3.0 a; v ce = 5 v - 12.5 - dynamic characteristics switching times (resistive load); see figure 5 and 6 t on turn-on time i con = 2.5 a; i bon = ? i boff = 0.5 a; r l =75 ? - 0.52 0.6 ? s t stg storage time - 2.7 3.3 ? s t f fall time - 0.3 0.35 ? s switching times (inductive load); see figure 7 and 8 t stg storage time i con = 2 a; i bon = 0.4 a; l b = 1 ? h; v bb = ? 5v -1.21.4 ? s t f fall time - 30 60 ns switching times (inductive load); see figure 7 and 8 t stg storage time i con = 2 a; i bon = 0.4 a; l b = 1 ? h; v bb = ? 5v; t j =100 ?c --1.8 ? s t f fall time - - 120 ns
buj103a all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 8 november 2011 5 of 13 nxp semiconductors buj103a silicon diffused power transistor fig 3. test circuit for collector-emitter sustaining voltage fig 4. oscilloscope display for collector-emitter sustaining voltage test waveform v im = ? 6 v to +8 v; v cc = 250 v; t p =20 ? s; ? =t p /t = 0.01. r b and r l calculated from i con and i bon requirements. fig 5. test circuit for resistive load switching f ig 6. switching times waveforms for resistive load 001aab987 horizontal 1 300 6 v vertical oscilloscope 50 v 100 to 200 30 hz to 60 hz 001aab988 v ce (v) min v ceosus i c (ma) 10 100 250 0 001aab989 t p r b v im 0 r l dut v cc t 001aab990 i c i b 10 % 10 % 90 % 90 % t on t off t s t f t t i bon ?i boff i con t r 30 ns
buj103a all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 8 november 2011 6 of 13 nxp semiconductors buj103a silicon diffused power transistor v cc = 300 v; v bb = ? 5 v; l c = 200 ? h; l b = 1 ? h. fig 7. test circuit for inductive load switching f ig 8. switching times wave forms for inductive load t j = 25 ? c. fig 9. dc current gain as a function of collector current; typical values fig 10. collector-emitter saturation voltage as a function of base current; typical values 001aab991 v cc l c dut l b i bon v bb 001aab992 i c i b 90 % t off i bon t s t f t t ?i boff i con 10 % 001aab994 i c (a) 10 ?2 10 1 10 ?1 10 10 2 h fe 1 v ce = 5 v 1 v t j = 25 c i b (a) 10 ?2 10 1 10 ?1 001aab995 0.8 1.2 0.4 1.6 2.0 v cesat (v) 0 i c = 1 a 2 a 3 a 4 a
buj103a all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 8 november 2011 7 of 13 nxp semiconductors buj103a silicon diffused power transistor i c /i b = 4. i c /i b = 4. fig 11. base-emitter saturation voltage as a function of collector current; typical values fig 12. collector-emitter saturation voltage as a function of collector current; typical values v ceclamp ? 1000 v; v cc = 150 v; v bb = ? 5 v; l b =1 ? h; l c =200 ? h. t j ? t j(max) . fig 13. test circuit for reverse bias safe operating area fig 14. reverse bias safe operating area 001aab996 v besat (v) i c (a) 10 ?1 10 1 0.6 0.8 0.2 0.4 1.0 1.2 1.4 0 001aab997 v cesat (v) i c (a) 10 ?1 10 1 0.2 0.1 0.3 0.4 0.5 0 001aab999 dut l c l b i bon v bb v cc v cl(ce) probe point v ceclamp (v) 0 1000 800 400 600 200 001aac000 4 6 2 8 10 i c (a) 0
buj103a all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 8 november 2011 8 of 13 nxp semiconductors buj103a silicon diffused power transistor 7. package information epoxy meets requirements of ul94 v-0 at 1 8 inch. t mb ? 25 ? c; mounted with heatsink compound and 30 ? 5 newton force on the center of the envelope. (1) p tot maximum and p tot peak maximum lines. (2) second breakdown limits. (3) i = region of permissible dc operation. ii = extension for repetitive pulse operation. iii = extension during turn-on in single tr ansistor converters provided that r be ? 100 ? and t p ? 0.6 ? s. fig 15. forward bias safe operating area 001aac001 10 ?1 10 ?2 10 1 10 2 i c (a) 10 ?3 v ceclamp (v) 1 10 3 10 2 10 (1) 100 s 200 s i (3) t p = 20 s duty cycle = 0.01 50 s 500 s dc ii (3) iii (3) (2) i cm(max) i c(max)
buj103a all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 8 november 2011 9 of 13 nxp semiconductors buj103a silicon diffused power transistor 8. package outline fig 16. package outline sot78 (to-220ab) references outline version european projection issue date iec jedec jeita sot78 sc-46 3-lead to-220ab sot78 08-04-23 08-06-13 notes 1. lead shoulder designs may vary. 2. dimension includes excess dambar. unit a mm 4.7 4.1 1.40 1.25 0.9 0.6 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 15.0 12.8 3.30 2.79 3.8 3.5 a 1 dimensions (mm are the original dimensions) plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead to-220ab 0 5 10 mm scale b b 1 (2) 1.6 1.0 c d 1.3 1.0 b 2 (2) d 1 e e 2.54 l l 1 (1) l 2 (1) max. 3.0 p q 3.0 2.7 q 2.6 2.2 d d 1 q p l 123 l 1 (1) b 1 (2) (3) b 2 (2) (2) e e b(3) a e a 1 c q l 2 (1) mounting base
buj103a all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 8 november 2011 10 of 13 nxp semiconductors buj103a silicon diffused power transistor 9. revision history table 6. revision history document id release date data sheet status change notice supersedes buj103a v.4 20111108 product data sheet - buj103a v.3 modifications: ? the format of this data sheet has been redesigned to comply with the new identity guidelines of nxp semiconductors. ? legal texts have been adapted to the new company name where appropriate. buj103a v.3 20050303 product data sheet - buj103a_hg v.2 buj103a_hg v.2 19980918 product data sheet - buj103a v.1 buj103a v.1 19980801 product data sheet - -
buj103a all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 8 november 2011 11 of 13 nxp semiconductors buj103a silicon diffused power transistor 10. legal information 10.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 10.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 10.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from competent authorities. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
buj103a all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 4 ? 8 november 2011 12 of 13 nxp semiconductors buj103a silicon diffused power transistor quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comple te, exhaustive or legally binding. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. 10.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 11. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors buj103a silicon diffused power transistor ? nxp b.v. 2011. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 8 november 2011 document identifier: buj103a please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 12. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 1 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics . . . . . . . . . . . . . . . . . . 3 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7 package information . . . . . . . . . . . . . . . . . . . . . 8 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 10 legal information. . . . . . . . . . . . . . . . . . . . . . . 11 10.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 10.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 10.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 10.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 11 contact information. . . . . . . . . . . . . . . . . . . . . 12 12 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

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